Superjunction structures for power devices and methods of manufacture

摘要

The power device in turn includes a semiconductor region comprising fillers in which a plurality of first and second conductivity types are alternately arranged. Each of the plurality of second conductivity type fillers includes a plurality of second conductivity type injection regions aligned on top of each other along the depth of the second conductivity type fillers, and the plurality of second conductivity type implants. And further comprising a trench region filled directly with regions of a second conductivity type semiconductor material.