SiC semiconductor devices is formed in insulation or semi-insulation SiC substrate and its manufacturing method

摘要

The present invention relates to a SiC semiconductor device having a high withstand voltage characteristic, and a manufacturing method thereof. The SiC semiconductor device includes an insulation or semi-insulation SiC substrate; semiconductor regions which are formed on the SiC substrate; and electrodes which are formed on the SiC substrate and are electrically connected to doping regions. The SiC semiconductor device according to the present invention has a high concentration semiconductor region on the insulation or semi-insulation SiC substrate. Thereby, the high withstand voltage characteristic is obtained. The SiC semiconductor device can be realized by an ion implantation process.;COPYRIGHT KIPO 2016