w Al x Ga y In z N, (c2) B w Al x Ga y The growth of the layer 3b of In z N, (c3) the growth of the intermediate layer 4b of B w Al x Ga y In z N, and the layers formed in steps c1 to c3 ( At least one of 3b, 4a, 4b) is at least a three-component III-N alloy comprising aluminum and gallium, the method further comprising (d) growing the layer (3; 3 ', 3 ") of GaN do."/>
METHOD FOR MANUFACTURING A THICK EPITAXIAL LAYER OF GALLIUM NITRIDE ON A SILICON OR SIMILAR SUBSTRATE AND LAYER OBTAINED USING SAID METHOD
首页>
外国专利>
METHOD FOR MANUFACTURING A THICK EPITAXIAL LAYER OF GALLIUM NITRIDE ON A SILICON OR SIMILAR SUBSTRATE AND LAYER OBTAINED USING SAID METHOD
METHOD FOR MANUFACTURING A THICK EPITAXIAL LAYER OF GALLIUM NITRIDE ON A SILICON OR SIMILAR SUBSTRATE AND LAYER OBTAINED USING SAID METHOD
展开▼
机译：在硅或类似基质上制造厚氮化镓外延层的方法以及采用所述方法获得的层
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention relates to a method for producing a GaN single crystal useful layer (3; 3 ', 3 ") on a substrate (1) whose thermal expansion coefficient is smaller than the thermal expansion coefficient of GaN by epitaxy, wherein the method (b) Three-dimensional epitaxial growth of GaN layer 3a relaxed at epitaxial temperature, (c1) growth of intermediate layer 4a of B w Al x Ga y In z N, (c2) B w Al x Ga y The growth of the layer 3b of In z N, (c3) the growth of the intermediate layer 4b of B w Al x Ga y In z N, and the layers formed in steps c1 to c3 ( At least one of 3b, 4a, 4b) is at least a three-component III-N alloy comprising aluminum and gallium, the method further comprising (d) growing the layer (3; 3 ', 3 ") of GaN do.
展开▼
机译：本发明涉及一种通过外延在热膨胀系数小于GaN的热膨胀系数的衬底（1）上制造GaN单晶有用层（3; 3′，3″）的方法，其中该方法（ b）在外延温度下放松了GaN层3a的三维外延生长，（c1）B w Al x Ga y 的中间层4a的生长Sub>在 z N中，（c2）B w Al x Ga y 在 z N中，（c3）B w Al x Ga y In的中间层4b的生长 z N，并且在步骤c1至c3中形成的层（3b，4a，4b中的至少一个）是至少包含铝和镓的三组分III-N合金，该方法还包括（d）生长GaN层（3; 3′，3″）。
展开▼
