OLED PECVD HMDSO PLASMA CURING OF PECVD HMDSO FILM FOR OLED APPLICATIONS

摘要

Methods for forming an OLED device are described. An encapsulation layer, with a buffer layer interposed between the barrier layers, is deposited over the OLED structure. The buffer layer is deposited on the first barrier layer and cured with a fluorine-containing plasma at a temperature of less than 100 degrees Celsius. Thereafter, a second barrier layer is deposited on the buffer layer.