首页> 外文期刊>Journal of optoelectronics and advanced materials >Kinetics of O and H atoms in pulsed O-2/HMDSO low pressure PECVD plasmas
【24h】

Kinetics of O and H atoms in pulsed O-2/HMDSO low pressure PECVD plasmas

机译:脉冲O-2 / HMDSO低压PECVD等离子体中O和H原子的动力学

获取原文
获取原文并翻译 | 示例
           

摘要

The 0 and H atom kinetics in a low pressure inductively coupled radiofrequency O-2/Hexamethyldisiloxane and water vapour pulsed plasma is investigated by Time-Resolved Optical Emission Spectroscopy. The O and H-atom loss coefficients in the post-discharge of O-2/HMDSO pulsed plasmas were measured to be 210(-3) and 3.10(-4) respectively. Such low recombination coefficients, as compared to the ones measured in oxygen plasmas (approximate to 10(-2)), are attributed to the adsorption of OH and H2O at the reactor walls which limits the O and H atom recombination. O and H atoms are likely to be responsible for HMDSO dissociation and subsequent film deposition during the post-discharge.
机译:通过时间分辨发射光谱研究了低压感应耦合射频O-2 /六甲基二硅氧烷和水蒸气脉冲等离子体中的0和H原子动力学。 O-2 / HMDSO脉冲等离子体放电后的O和H原子损失系数经测量分别为210(-3)和3.10(-4)。与在氧等离子体中测得的相比,这样低的重组系数(大约为10(-2))归因于反应器壁上OH和H2O的吸附,这限制了O和H原子的重组。 O和H原子可能是造成HMDSO解离和后放电过程中后续膜沉积的原因。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号