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WAFER PROCESSED BODY TEMPORARY BONDING MATERIAL FOR WAFER PROCESSING AND METHOD FOR PRODUCING THIN WAFER

机译:用于晶片加工的晶片加工体临时粘结材料和生产薄晶片的方法

摘要

The present invention is a temporary adhesive for wafer processing for temporarily bonding a wafer, which has a circuit surface to a surface and needs to be processed on a support, to a support, comprising a non-silicone thermoplastic resin layer (A) detachably adhered to the surface of the wafer. A second temporary adhesive layer composed of a first temporary adhesive layer, a thermosetting siloxane polymer layer (B) laminated on the first temporary adhesive layer, and a thermosetting siloxane modified polymer laminated on the second temporary adhesive layer and detachably adhesive to the support. It is a temporary adhesive for wafer processing provided with the composite temporary adhesive layer which has a three-layered structure of the 3rd temporary adhesive layer which consists of layers (C). As a result, there is provided a wafer processed body which is easy to be temporarily bonded and peeled off, which is excellent in CVD resistance, and which can increase the productivity of a thin wafer, a temporary adhesive for wafer processing, and a method of manufacturing a thin wafer using the same.
机译:本发明是用于晶片加工的临时粘合剂,其用于将具有电路表面至表面并且需要在支撑体上进行处理的晶片临时粘合至支撑体,该支撑体包括可分离地粘附的非硅氧烷热塑性树脂层(A)。到晶片表面。第二临时粘合剂层,其由第一临时粘合剂层,层压在第一临时粘合剂层上的热固性硅氧烷聚合物层(B)和层压在第二临时粘合剂层上并且可分离地粘附至载体的热固性硅氧烷改性的聚合物组成。晶片处理用临时粘合剂具有复合临时粘合剂层,该复合临时粘合剂层具有由层(C)构成的第三临时粘合剂层的三层结构。结果,提供了一种晶片加工体,一种用于晶片加工的临时粘合剂以及一种方法,该晶片加工体易于临时粘结和剥离,并且该晶片加工体具有优异的耐CVD性并且可以提高薄晶片的生产率。使用该晶片制造薄晶片的过程。

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