Thin Film Transistor and Manufacturing Method Thereof

摘要

The present invention relates to a thin film transistor and a method of manufacturing the same, wherein the thin film transistor 200 includes a gate electrode 21 formed on a substrate 20; A semiconductor layer 25 formed on the insulating layer 23 formed on the gate electrode 21; And a source electrode 27 and a drain electrode 29 formed on the semiconductor layer 25, wherein the source electrode 27 and the drain electrode 29 are positioned at both ends of the semiconductor layer 25. Connected to the semiconductor layer 25; The insulating layer 23 may include a first insulating layer 231 and a second insulating layer 232, and the second insulating layer 232 may include the first insulating layer 231 and the semiconductor layer 25. Is located between). In the above-described thin film transistor and its manufacturing method, an insulating layer having a double layer structure is used to improve interface characteristics and to repair interface state defects in a semiconductor layer, thereby improving performance of the thin film transistor.