RADIATION-RESISTANT STATIC OPERATIVE REMEMBERING DEVICE (RAM) ON COMPLETE METAL-OXIDES-SEMICONDUCTOR TRANSISTORS

摘要

Usage: for the field of microelectronics. The essence of the utility model is that the radiation-resistant static random access memory (RAM) on complementary metal-oxide-semiconductor transistors contains blocks of address shapers, blocks of buffer shapers of data, a control circuit, an output resolution circuit, also contains two drives, two detection blocks and error correction, a block of address and control signal generators, which is connected to drives, which are connected to error detection and correction blocks, which are single with blocks of buffer shapers of data, the outputs of which are outputs of the device, and the outputs of blocks of address shapers and control circuits are connected to the inputs of the block of shapers of address and control signals, the output of which is connected to the input of the output resolution circuit, the outputs of which are connected to the inputs of blocks of buffer shapers of data, each drive is made in the form of a matrix of memory cells and contains blocks consisting of basic subunits that contain bit sections of the main bits and times in-line sections of control bits that relate to different words and are structurally arranged in such a way that the bits of one word are spaced apart by a distance sufficient to exclude multiple failures in the bits of the data bus belonging to one information word. Effect: providing the ability to increase resistance to single failures when exposed to individual nuclear particles (VLF). 3 s.p. f-ly, 2 ill.