RADIATION-RESISTANT MEMORY ELEMENT FOR STATIC OPERATIVE REMEMBERING DEVICES ON COMPLETE METAL-OXIDES-SEMICONDUCTOR TRANSISTORS

摘要

Use: to create a radiation-resistant memory element. The essence of the utility model is that the radiation-resistant memory element for static random access memory on complementary metal-oxide-semiconductor transistors contains a p-type substrate and an "n-type" pocket, the active regions of n- and p-type trigger transistors and control transistors of n-types, additionally contains p + and n + contacts to the substrate and the "pocket" connected to the buses of zero potential and power, respectively, and located in each element of the memory matrix near the border between the substrate and “Pocket”, between adjacent memory elements of one line and between internal nodes of a memory element trigger, while the length and channel width of n-channel and p-channel transistors of a memory element trigger are increased. Effect: providing the ability to increase resistance to external radiation factors. 4 ill.