A method of operating an etch process device for a silicon etch process

摘要

A method of operating an etch process device, comprising: performing a pre-treat process in an etch process device, the pretreatment process including coating inner walls of the etch process device by depositing a fluorocarbon polymer material generated from a plasma of a fluorocarbon gas, the fluorocarbon gas selected from CHF and CHF and wherein a coating of the fluorohydrocarbon polymer material is formed on the inner walls of the etching process apparatus; andperforming at least one silicon etch process in the etch process device on at least one substrate, the at least one substrate each including a patterned mask layer (20) physically exposing at least a portion of a semiconductor material, wherein etchant is employed in the silicon etch process. wherein the pretreatment process of the inner walls of the etch process device increases an etch rate of the at least one silicon etch process by a positive percentage, wherein the positive percentage is at least 50% during a first silicon etch process performed after the pretreatment process relative to a comparative silicon process. Etching process in which the same processing conditions as in the first silicon etching process are used and which is performed in an etching process apparatus without any pretreatment.