Monolithically integrated power transistor circuit with integrated current limiting

摘要

A monolithically integrated power transistor circuit with integrated current limiting is provided. The power transistor circuit comprises a power transistor (40) integrated within a substrate (50), wherein a source contact (41), a drain contact (42) and a gate contact (43) of the power transistor (40) within the substrate (50 ) are realized. Furthermore, the power transistor circuit comprises a further transistor (30), which is also realized within the same substrate (50), wherein the further transistor (30) has a drain contact (32) which is electrically conductive with the gate contact (43) of Power transistor (40) is connected. According to the invention, within the substrate (50), between the source contact (41) and the gate contact (43) of the power transistor (40), a potential contact (20) is realized, which is electrically conductive with the gate contact (33) of the another transistor (30) is connected.