METHOD FOR PRODUCING A MONOCRYSTALLINE LAYER OF GAAS MATERIAL AND SUBSTRATE FOR EPITAXIC GROWTH OF A MONOCRYSTALLINE LAYER OF GAAS MATERIAL

摘要

A method of manufacturing a monocrystalline layer of GaAs material comprising transferring a monocrystalline seed layer of SrTiO3 material to a silicon material support substrate followed by epitaxial growth of a monocrystalline layer of GaAs material.