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CdTe-BASED COMPOUND SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME

机译:基于CdTe的化合物单晶及其制备方法

摘要

Provided are a high resistance CdTe-based compound single crystal with miniaturized Te precipitates and a method for producing the same. According to one embodiment of the present invention, a CdTe based compound single crystal is provided including a precipitate having a particle size of less than 0.1 µm obtained from an analysis by a light scattering tomography method. In the CdTe based compound single crystal, resistivity may be 1×10 7 ©cm or more. In addition, in the CdTe based compound single crystal, a precipitate having a particle size of 0.1 µm or more obtained from the analysis by the light scattering tomography method is not detected. In the CdTe based compound single crystal, the precipitate may be a Te precipitate.
机译:提供具有微细Te析出物的高电阻CdTe系化合物单晶及其制造方法。根据本发明的一个实施方式,提供了一种基于CdTe的化合物单晶,其包括通过光散射层析成像法的分析而获得的具有小于0.1μm的粒径的沉淀物。在基于CdTe的化合物单晶中,电阻率可以为1×10 7Ωcm以上。另外,在基于CdTe的化合物单晶中,未检测到通过光散射层析成像法的分析而获得的粒径为0.1μm以上的沉淀物。在基于CdTe的化合物单晶中,沉淀物可以是Te沉淀物。

著录项

  • 公开/公告号EP3305950B1

    专利类型

  • 公开/公告日2020-02-19

    原文格式PDF

  • 申请/专利权人 JX NIPPON MINING & METALS CORPORATION;

    申请/专利号EP20160821068

  • 发明设计人 MURAKAMI KOUJI;NODA AKIRA;

    申请日2016-03-29

  • 分类号C30B29/48;C30B33/02;C01B19/04;

  • 国家 EP

  • 入库时间 2022-08-21 11:40:59

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