METHOD OF MANUFACTURING EPITAXIAL WAFER, SILICON-BASED SUBSTRATE FOR EPITAXIAL GROWTH, AND EPITAXIAL WAFER

摘要

To provide a method of manufacturing an epitaxial wafer capable of suppressing a crack generated in an outer chamfered portion from extending toward a center portion.SOLUTION: The method of manufacturing an epitaxial wafer includes the steps of: preparing a silicon-based substrate having a chamfered portion in the outer peripheral portion; forming an annular trench along the inner peripheral edge of the chamfered portion in the chamfered portion of the silicon-based substrate; and performing an epitaxial growth on the silicon-based substrate having the trench formed therein.SELECTED DRAWING: Figure 1