首页> 外国专利> A method for making a high chrome cast iron cast cermet TiC chip and a method for manufacturing a plate liner for a bellless raw material charging device using this method.

A method for making a high chrome cast iron cast cermet TiC chip and a method for manufacturing a plate liner for a bellless raw material charging device using this method.

机译:制造高铬铸铁金属陶瓷TiC芯片的方法和使用该方法制造用于无钟状原料装料装置的板衬的方法。

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a cast iron cast gurney structure for realizing brazing joining of a cermet TiC chip and high chromium cast iron without removing a vacuum coating thin film. SOLUTION: A cermet TiC chip whose surface is coated with a vacuum thin film is electroless copper plated or electroless Ni plated, and then electrically Ni-B plated, and a liquid flux containing a clay particle is dipped and adhered and heated. In the method of forming a fired film of flux and casting the cermet TiC chip with high-chromium cast iron, the porcelain clay-containing liquid flux comprises boric acid, borax 7 to 10 wt%, and potassium fluoride 5 to 10 wt%. Cermet TiC characterized by containing 5 to 10 wt% of potassium borofluoride, 38 to 20 wt% of potassium feldspar, sodium feldspar and kaolinite, and setting the melting point of the fired film to 1200°C ± 50°C. High chrome cast iron casting method for chips. And the plate liner structure adopting this casting method. [Selection diagram] Fig. 14
机译:解决的问题:提供一种制造铸铁铸铁格尼结构的方法,该结构用于实现金属陶瓷TiC芯片和高铬铸铁的钎焊连接,而无需去除真空镀膜。解决方案:金属陶瓷TiC芯片的表面涂有真空薄膜,先进行化学镀铜或化学镀镍,然后再进行镍B电镀,然后浸入并粘附含有黏土颗粒的液体助熔剂并加热。在形成助熔剂的烧成膜并用高铬铸铁铸造金属陶瓷TiC芯片的方法中,含瓷土的液体助熔剂包含硼酸,硼砂7至10重量%和氟化钾5至10重量%。金属陶瓷TiC的特征在于含有5至10重量%的硼氟化钾,38至20重量%的长石钾,长石钠和高岭石,并且将烧成膜的熔点设定为1200℃±50℃。高铬铸铁芯片的铸造方法。并且板衬结构采用这种铸造方法。 [选择图]图14

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