首页> 外国专利> A high-chromium cast iron cast-in method for cermet TiC chips and a plate liner manufacturing method for a bellless raw material charging apparatus using this method.

A high-chromium cast iron cast-in method for cermet TiC chips and a plate liner manufacturing method for a bellless raw material charging apparatus using this method.

机译:用于金属陶瓷TiC芯片的高铬铸铁铸造方法以及用于使用该方法的无钟状原料装料设备的板衬制造方法。

摘要

The present invention provides a cast iron cast structure manufacturing method that realizes brazed joining of a cermet TIC chip and high chromium cast iron without removing a vacuum coating thin film. A cermet TIC chip whose surface is coated with a vacuum thin film is subjected to electroless copper plating or electroless Ni plating, followed by electric Ni-B plating, dipping and attaching a liquid flux containing porcelain particles, and heating. In the method of forming a fired film of the flux and casting the cermet TIC chip with high chromium cast iron, the porcelain granule-containing liquid flux comprises boric acid, borax 7 to 10 wt%, potassium fluoride 5 to 10 wt% Cermet TiC characterized in that 5-10 wt% of potassium borofluoride and 38-20 wt% of the ratio of potassium feldspar, sodium feldspar, and kaolinite were contained, and the melting point of the fired film was 1200 ° C. ± 50 ° C. High chrome cast iron filling method for chips. And a plate liner structure using this cast-in method. [Selection] Figure 14
机译:本发明提供一种铸铁铸件结构制造方法,该铸铁铸件结构制造方法实现了金属陶瓷TIC芯片和高铬铸铁的钎焊连接而无需去除真空镀膜。对表面涂有真空薄膜的金属陶瓷TIC芯片进行化学镀铜或化学镀Ni,然后再进行Ni-B电镀,浸入并附着包含瓷粒的液态焊剂,然后加热。在形成焊剂的烧成膜并用高铬铸铁浇铸金属陶瓷TIC芯片的方法中,含瓷颗粒的液体焊剂包含硼酸,硼砂7至10重量%,氟化钾5至10重量%金属陶瓷TiC。其特征在于,包含5-10重量%的硼氟化钾和38-重量%的钾长石,钠长石和高岭石的比例,烧成膜的熔点为1200℃。±50℃。芯片的高铬铸铁填充方法。以及使用这种浇铸方法的板衬结构。 [选择]图14

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