Method of manufacturing reflective electrode for deep ultraviolet light emitting device, method of manufacturing deep ultraviolet light emitting device, and deep ultraviolet light emitting device

摘要

PROBLEM TO BE SOLVED: To provide a reflective electrode for a deep ultraviolet light emitting device capable of achieving both high light emission output and excellent reliability. A method of manufacturing a reflective electrode 80 for a deep ultraviolet light emitting device includes forming a first metal layer 81 of Ni with a thickness of 3 to 20 nm on a p-type contact layer 70 having a superlattice structure. A second step of forming Rh as a reflective metal in a thickness of 20 nm or more and 2 μm or less on the first metal layer, and heating the first metal layer and the second metal layer 82 at 300° C. or more and 600° C. or less A third step of performing the treatment. [Selection diagram] Figure 1A