Method for manufacturing reflective electrode for deep ultraviolet light emitting device, method for manufacturing deep ultraviolet light emitting device, and deep ultraviolet light emitting device

摘要

PROBLEM TO BE SOLVED: To provide a reflective electrode for a deep ultraviolet light emitting element capable of achieving both high light emission output and excellent reliability. According to the present invention, a method for manufacturing a reflective electrode for a deep ultraviolet light emitting element is a first method of forming Ni as a first metal layer with a thickness of 3 to 20 nm on a p-type contact layer having a super lattice structure. A step, a second step of forming Rh as a reflective metal on the first metal layer as a reflective metal with a thickness of 20 nm or more and 2 μm or less, and 300 ° C. or more and 600 ° C. or less with respect to the first metal layer and the second metal layer. The third step of performing the heat treatment of the above is provided. [Selection diagram] FIG. 1A