Selective deposition of silicon using deposition-treatment-etching process

摘要

A method for selectively depositing a silicon film on a substrate having a first surface and a second surface is described. More specifically, the processes of film deposition, treatment of the film to alter some of the properties of the film, and selective etching of the film from various surfaces of the substrate are described. Deposition, processing and etching can be repeated to selectively deposit the film on one of the two substrate surfaces. [Selection diagram] Figure 1