Process considerations for layer-by-layer 3D patterning of silicon, using ion implantation, silicon deposition, and selective silicon etching

摘要

The authors study suitable process parameters, and the resulting pattern formation, in additive layer-by-layer fabrication of arbitrarily shaped three-dimensional (3D) silicon (Si) micro- and nanostructures. The layer-by-layer fabrication process investigated is based on alternating steps of chemical vapor deposition of Si and local implantation of gallium ions by focused ion beam writing. In a final step, the defined 3D structures are formed by etching the Si in potassium hydroxide, where the ion implantation provides the etching selectivity.