Semiconductor manufacturing component including SiC vapor deposited layer and method of manufacturing the same

摘要

The present invention relates to a semiconductor manufacturing component used in a dry etching process, comprising: a base material; and a SiC deposited layer formed on a surface of the base material. Wherein the ratio of the thickness of the base material and the thickness of the SiC deposition layer is 2: 1 to 100: 1.