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Semiconductor device having stripe-shaped trench gate structure and gate connector structure

机译:具有条纹状沟槽栅极结构和栅极连接器结构的半导体器件

摘要

A semiconductor device includes a transistor cell with a stripe-shaped trench gate structure that extends from a first surface into a semiconductor body. A gate connector structure at a distance to the first surface is electrically connected to a gate electrode in the trench gate structure. A gate dielectric separates the gate electrode from the semiconductor body. First sections of the gate dielectric outside a vertical projection of the gate connector structure are thinner than second sections within the vertical projection of the gate connector structure.
机译:半导体器件包括具有从第一表面延伸到半导体主体中的条形沟槽栅结构的晶体管单元。距第一表面一定距离的栅极连接器结构电连接至沟槽栅极结构中的栅极。栅极电介质将栅电极与半导体本体分开。栅极连接器结构的垂直投影之外的栅极电介质的第一部分比栅极连接器结构的垂直投影内的第​​二部分薄。

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