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Resistive switching memory with replacement metal electrode
Resistive switching memory with replacement metal electrode
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机译:带有备用金属电极的电阻式开关存储器
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摘要
A method is presented for facilitating oxygen vacancy generation in a resistive random access memory (RRAM) device. The method includes forming a RRAM stack having a first electrode and at least one sacrificial layer, encapsulating the RRAM stack with a dielectric layer, constructing a via resulting in removal of the at least one sacrificial layer of the RRAM stack, the via extending to a high-k dielectric layer of the RRAM stack, and forming a second electrode in the via such that the second electrode extends laterally into cavities defined by the removal of the at least one sacrificial layer.
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