Calibration of elementary small patterns in variable-shaped-beam electron-beam lithography

摘要

A method for calibrating elementary patterns in variable-shaped-beam electron-beam lithography, includes the following steps: producing, by variable-shaped-beam electron-beam lithography, a calibration pattern comprising geometric figures each having a nominal critical dimension, the figures being divided into elementary patterns of smaller dimensions than each the nominal critical dimension; measuring the actual critical dimension of each the geometric figure; and applying a regression method on the basis of the actual critical dimensions thus determined to construct a mathematical model expressing either a variation in dimensions of the elementary patterns, or an error in the exposure dose of the elementary patterns producing an equivalent effect to the variation in dimensions, as a function of the dimensions of the elementary patterns. Application to the preparation of data with a view to transferring a pattern to a substrate by variable-shaped-beam electron-beam lithography.