首页>
外国专利>
Laterally diffused mosfet with locos dot
Laterally diffused mosfet with locos dot
展开▼
机译:横向扩散的mosfet带有疯子点
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present disclosure relates to semiconductor structures and, more particularly, to a laterally diffused MOSFET (LDMOS) and methods of manufacture. The structure includes: a gate structure having a drain region and a source region; and an oxidation extending from the gate structure to the drain region of the gate structure, the oxidation comprising a thinner oxide portion and a thicker oxide portion.
展开▼