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System and method for high performance sequential read by decoupling of inter-cell interference for NAND flash memories

机译:用于去耦NAND闪存的小区间干扰的高性能顺序读取的系统和方法

摘要

A flash memory system may include a cell flash memory and a circuit for performing operations of the plurality of cells. The cell flash memory may have a plurality of cells. The circuit may be configured to estimate an interference state based on a result of a read operation on a first neighboring cell of a first cell among the plurality of cells. The circuit may be configured to perform a read operation on the first cell. The circuit may be configured to generate soft information based on a result of the read operation and the interference state. The circuit may be configured to decode the result of the read operation on the first cell based on the soft information.
机译:闪存系统可以包括单元闪存和用于执行多个单元的操作的电路。单元闪存可以具有多个单元。电路可以被配置为基于对多个小区中的第一小区的第一相邻小区的读取操作的结果来估计干扰状态。该电路可以被配置为在第一单元上执行读取操作。电路可以被配置为基于读取操作和干扰状态的结果来生成软信息。电路可以被配置为基于软信息对第一单元的读取操作的结果进行解码。

著录项

  • 公开/公告号US10614897B1

    专利类型

  • 公开/公告日2020-04-07

    原文格式PDF

  • 申请/专利权人 TOSHIBA MEMORY CORPORATION;

    申请/专利号US201816130757

  • 发明设计人 AVI STEINER;

    申请日2018-09-13

  • 分类号G11C16/04;G11C16/34;G11C16/26;

  • 国家 US

  • 入库时间 2022-08-21 11:26:29

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