首页> 外国专利> MEMORY DEVICE HAVING A NAND FLASH MEMORY AND READ OPERATION METHOD THEREOF, MEMORY DEVICE HAVING A NAND FLASH MEMORY

MEMORY DEVICE HAVING A NAND FLASH MEMORY AND READ OPERATION METHOD THEREOF, MEMORY DEVICE HAVING A NAND FLASH MEMORY

机译:具有NAND闪存的存储器装置及其读取操作方法,具有NAND闪存的存储器装置

摘要

PURPOSE: A memory device mounting a NAND flash memory for increasing the performance capability is provided to increase the lead performance of the memory device by applying an interleave type to a removal/program operation. CONSTITUTION: Each NAND flash chip performs read or write operation about data. A NAND flash controller(20) controls the operation of each NAND flash chip. The NAND flash controller performs the read operation in an interleave type. The NAND flash controller receives the output data of each NAND flash chip by read operation.
机译:目的:提供一种安装有NAND闪存以提高性能的存储设备,以通过将交织类型应用于移除/编程操作来提高存储设备的领先性能。组成:每个NAND闪存芯片都执行数据读或写操作。 NAND闪存控制器(20)控制每个NAND闪存芯片的操作。 NAND闪存控制器以交错类型执行读取操作。 NAND闪存控制器通过读取操作接收每个NAND闪存芯片的输出数据。

著录项

  • 公开/公告号KR20110000878A

    专利类型

  • 公开/公告日2011-01-06

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC.;

    申请/专利号KR20090058188

  • 发明设计人 CHA YOUNG DUG;

    申请日2009-06-29

  • 分类号G06F13/10;G06F12;

  • 国家 KR

  • 入库时间 2022-08-21 17:52:46

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