METHOD FOR FORMING A TRANSITION METAL DICHALCOGENIDE - GROUP III-V HETEROSTRUCTURE AND A TUNNELING FIELD EFFECT TRANSISTOR

摘要

A method for forming a Transition Metal Dichalcogenide (TMD)—Group III-V semiconductor heterostructure comprises forming an insulating layer on an upper surface of a substrate, wherein the upper surface of the substrate is formed by a (111)-surface of a group IV semiconductor, forming a first aperture in the insulating layer, the aperture exposing a portion of the upper surface of the substrate, forming in a first epitaxial growth process, a semiconductor structure formed by a group III-V semiconductor comprising a pillar extending through the first aperture and a micro disc extending horizontally along a first portion of the upper surface of the insulating layer, and forming in a second epitaxial growth process, a TMD layer on an upper surface of the micro disc.