首页>
外国专利>
TWO-DIMENSIONAL ELECTROSTRICTIVE FIELD EFFECT TRANSISTOR (2D-EFET)
TWO-DIMENSIONAL ELECTROSTRICTIVE FIELD EFFECT TRANSISTOR (2D-EFET)
展开▼
机译:二维电场效应晶体管(2D-EFET)
展开▼
页面导航
摘要
著录项
相似文献
摘要
A device and method for manufacturing a two-dimensional electrostrictive field effect transistor having a substrate, a source, a drain, and a channel disposed between the source and the drain. The channel is a two-dimensional layered material and a gate proximate the channel. The gate has a column of an electrostrictive or piezoelectric or ferroelectric material, wherein an electrical input to the gate produces an elongation of the column that applies a force or mechanical stress on the channel and reduces a bandgap of two-dimensional material such that the two-dimensional electrostrictive field effect transistor operates with a subthreshold slope that is less than 60 mV/decade.
展开▼