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FIELD-EFFECT TRANSISTOR ARRANGEMENT AND METHOD FOR SETTING A DRAIN CURRENT OF A FIELD-EFFECT TRANSISTOR
FIELD-EFFECT TRANSISTOR ARRANGEMENT AND METHOD FOR SETTING A DRAIN CURRENT OF A FIELD-EFFECT TRANSISTOR
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机译:场效应晶体管的布置以及用于设定场效应晶体管的漏电流的方法
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摘要
A field-effect transistor system is provided that comprises a field-effect transistor having a back-gate terminal that can be adjusted by a back-gate voltage, a gate-source voltage and a drain-source voltage additionally being present at the field-effect transistor, and a drain current flowing through the field-effect transistor. In addition, the field-effect transistor system includes a control unit connected to the back-gate terminal, which unit is set up to set the drain current flowing through the field-effect transistor to a setpoint current via a controlling of the back-gate voltage at the back-gate terminal, the controlling of the back-gate voltage taking place as a function of at least the gate-source voltage. In addition, a method is provided for setting a drain current of a field-effect transistor.
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