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FIELD-EFFECT TRANSISTOR ARRANGEMENT AND METHOD FOR SETTING A DRAIN CURRENT OF A FIELD-EFFECT TRANSISTOR

机译:场效应晶体管的布置以及用于设定场效应晶体管的漏电流的方法

摘要

A field-effect transistor system is provided that comprises a field-effect transistor having a back-gate terminal that can be adjusted by a back-gate voltage, a gate-source voltage and a drain-source voltage additionally being present at the field-effect transistor, and a drain current flowing through the field-effect transistor. In addition, the field-effect transistor system includes a control unit connected to the back-gate terminal, which unit is set up to set the drain current flowing through the field-effect transistor to a setpoint current via a controlling of the back-gate voltage at the back-gate terminal, the controlling of the back-gate voltage taking place as a function of at least the gate-source voltage. In addition, a method is provided for setting a drain current of a field-effect transistor.
机译:提供了一种场效应晶体管系统,其包括具有背栅端子的场效应晶体管,该背栅端子可以通过背栅电压来调节,此外,在场效应晶体管处还存在栅-源电压和漏-源电压。效应晶体管,漏极电流流过场效应晶体管。另外,场效应晶体管系统包括连接到背栅端子的控制单元,该控制单元被设置为通过背栅的控制将流过场效应晶体管的漏极电流设置为设定点电流。在背栅端子上的最大电压,至少根据栅极-源极电压来控制背栅电压。另外,提供了一种用于设置场效应晶体管的漏极电流的方法。

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