Origin of Larger Drain Current Variability in N-Type Field-Effect Transistors Analyzed by Variability Decomposition Method

摘要

The origin of larger on-state drain current (I_(on) variability in n-type field-effect transistors (NFETs) than that in p-type field-effect transistors (PFETs), is investigated by evaluating FETs fabricated using 65 nm technology. It is found that the larger I_(on) variability in NFETs is caused by not only the larger threshold voltage component but also the larger current-onset voltage component of the I_(on)variability in NFETs. Moreover, it is experimentally confirmed that I_(on) variability of NFETs can be reduced by the halo carbon co-implantation through the reduction of threshold voltage and current-onset voltage components of theI_(on)variability in NFETs.