GROUP III-V COMPOUND SEMICONDUCTOR SUBSTRATE AND GROUP III-V COMPOUND SEMICONDUCTOR SUBSTRATE WITH EPITAXIAL LAYER

摘要

An InP substrate that is a group III-V compound semiconductor substrate includes particles of greater than or equal to 0.19 μm in particle size at less than or equal to 0.22 particles/cm² or particles of greater than or equal to 0.079 μm in particle size at less than or equal to 20 particles/cm² on the main surface. An epilayer-attached InP substrate that is an epilayer-attached group III-V compound semiconductor substrate includes the InP substrate mentioned above and an epitaxial layer disposed on the main surface of the InP substrate, and includes LPDs of greater than or equal to 0.24 μm in circle-equivalent diameter at less than or equal to 10 defects/cm² or LPDs of greater than or equal to 0.136 μm in circle-equivalent diameter at less than or equal to 30 defects/cm² on the main surface in a case where the epitaxial layer has a thickness of 0.3 μm.