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Group III-V compound semiconductor substrate and group III-V compound semiconductor substrate with epitaxial layer
Group III-V compound semiconductor substrate and group III-V compound semiconductor substrate with epitaxial layer
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机译:III-V族化合物半导体衬底和基团III-V复合半导体衬底,具有外延层
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摘要
An InP substrate that is a group III-V compound semiconductor substrate includes particles of greater than or equal to 0.19 μm in particle size at less than or equal to 0.22 particles/cm2 or particles of greater than or equal to 0.079 μm in particle size at less than or equal to 20 particles/cm2 on the main surface. An epilayer-attached InP substrate that is an epilayer-attached group III-V compound semiconductor substrate includes the InP substrate mentioned above and an epitaxial layer disposed on the main surface of the InP substrate, and includes LPDs of greater than or equal to 0.24 μm in circle-equivalent diameter at less than or equal to 10 defects/cm2 or LPDs of greater than or equal to 0.136 μm in circle-equivalent diameter at less than or equal to 30 defects/cm2 on the main surface in a case where the epitaxial layer has a thickness of 0.3 μm.
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机译:作为III-V族化合物半导体衬底的INP衬底包括小于或等于0.19μm的颗粒尺寸小于或等于0.22颗粒/ cm 2 sup>或大于或等于的粒子在主表面上以小于或等于20颗粒/ cm 2 的粒度等于0.079μm。作为脱蚁体附着的INI-V复合半导体衬底的脱垂的INP基板包括上述INP基板和设置在INP基板的主表面上的外延层,并且包括大于或等于0.24μm的LPDS在圆形直径的圆形等于10缺陷的直径下,圆同等直径大于或等于0.136μm的圆形或等于30缺陷/ cm 。
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