III-V compound semiconductor substrate and III-V compound semiconductor substrate with epitaxial layer

摘要

The InP substrate, which is a group III-V compound semiconductor substrate, has 0.22 particles / cm ² or less of particles having a particle size of 0.19 μm or more on the main surface or 20 particles / cm of particles having a particle size of 0.079 μm or more. Including ² or less. An InP substrate with an epi layer, which is an III-V group compound semiconductor substrate with an epi layer, includes the InP substrate and an epitaxial layer disposed on the main surface of the InP substrate, and has an epitaxial layer thickness of 0.3 μm. equal area circle diameter on the main surface of the above-LPD 0.24 .mu.m is 10 / cm ² or less or equal area circle diameter containing 30 pieces / cm ² or less or more LPD 0.136Myuemu when. Thereby, the III-V group compound semiconductor substrate and the III-V group compound semiconductor substrate with an epi layer which can reduce the defect of the epitaxial layer grown on the main surface are provided.