HIGH POWER RADIO FREQUENCY SWITCHES WITH LOW LEAKAGE CURRENT AND LOW INSERTION LOSS

摘要

High power radio frequency (RF) switches with low leakage current and low insertion loss are provided. In one embodiment, an RF switch includes a plurality of transistors and is configured to selectively connect one of a transmit path or a receive path to an antenna. All of the transistors are configured to be in an on state when the RF switch operates in a high power mode and all of the transistors are configured to be in an off state when the RF switch operates in a low power mode.