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SEMICONDUCTOR FILM COMPOSITION, METHOD FOR MANUFACTURING SEMICONDUCTOR FILM COMPOSITION, METHOD FOR MANUFACTURING SEMICONDUCTOR MEMBER, METHOD FOR MANUFACTURING SEMICONDUCTOR PROCESSING MATERIAL, AND SEMICONDUCTOR DEVICE
SEMICONDUCTOR FILM COMPOSITION, METHOD FOR MANUFACTURING SEMICONDUCTOR FILM COMPOSITION, METHOD FOR MANUFACTURING SEMICONDUCTOR MEMBER, METHOD FOR MANUFACTURING SEMICONDUCTOR PROCESSING MATERIAL, AND SEMICONDUCTOR DEVICE
Provided is a composition for forming a film for semiconductor devices, including: a compound (A) including a Si—O bond and a cationic functional group containing at least one of a primary nitrogen atom or a secondary nitrogen atom; a crosslinking agent (B) which includes three or more —C(═O)OX groups (X is a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms) in the molecule, in which from one to six of three or more —C(═O)OX groups are —C(═O)OH groups, and which has a weight average molecular weight of from 200 to 600; and a polar solvent (D).
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