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VERTICAL TRENCH GATE MOSFET WITH INTEGRATED SCHOTTKY DIODE
VERTICAL TRENCH GATE MOSFET WITH INTEGRATED SCHOTTKY DIODE
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机译:集成肖特基二极管的垂直沟道栅极MOSFET
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摘要
An integrated circuit includes a trench gate MOSFET including MOSFET cells. Each MOSFET cell includes an active trench gate in an n-epitaxial layer oriented in a first direction with a polysilicon gate over a lower polysilicon portion. P-type body regions are between trench gates and are separated by an n-epitaxial region. N-type source regions are located over the p-type regions. A gate dielectric layer is between the polysilicon gates and the body regions. A metal-containing layer contacts the n-epitaxial region to provide an anode of an embedded Schottky diode. A dielectric layer over the n-epitaxial layer has metal contacts therethrough connecting to the n-type source regions, to the p-type body regions, and to the anode of the Schottky diode.
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