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HYBRID INTEGRATION FOR PHOTONIC INTEGRATED CIRCUITS

机译:光子集成电路的混合集成

摘要

Photonic integrated circuits (PICs) enable manipulation of light on a chip for telecommunications and information processing. They can be made with silicon and silicon-compatible materials using complementary metal-oxide-semiconductor (CMOS) fabrication techniques developed for making electronics. Unfortunately, most light sources are made with III-V and II-VI materials, which are not compatible with silicon CMOS fabrication techniques. As a result, the light source for a PIC is either off-chip or integrated onto the PIC after CMOS fabrication is over. Hybrid integration can be improved by forming a recess in the PIC to receive a III-V or II-VI photonic chip. Mechanical stops formed in or next to the recess during fabrication align the photonic chip vertically to the PIC. Fiducials on the PIC and the photonic chip enable sub-micron lateral alignment. As a result, the photonic chip can be flip-chip bonded to the PIC with sub-micron vertical and lateral alignment precision.
机译:光子集成电路(PIC)可以操纵芯片上的光,以进行电信和信息处理。可以使用开发用于制造电子产品的互补金属氧化物半导体(CMOS)制造技术,使用硅和与硅兼容的材料来制造它们。不幸的是,大多数光源是由与硅CMOS制造技术不兼容的III-V和II-VI材料制成的。结果,在CMOS制造结束后,用于PIC的光源要么在芯片外,要么集成到PIC。通过在PIC中形成凹槽以容纳III-V或II-VI光子芯片,可以改善混合集成。在制造过程中,在凹槽内或凹槽附近形成的机械挡块使光子芯片与PIC垂直对齐。 PIC和光子芯片上的基准使亚微米横向对准成为可能。结果,可以以亚微米的垂直和横向对准精度将光子芯片倒装芯片连接到PIC。

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