READ TECHNIQUES FOR SENSE AMPLIFIER IN FDSOI TECHNOLOGY

摘要

Some embodiments relate to a sense amplifier. The sense amplifier includes a fully-depleted silicon on insulator (FDSOI) substrate, including a handle substrate region, an insulator layer over the handle substrate region, and a device region over the insulator layer. An n-well region is disposed in the handle substrate region, and an n-well contact region extends from the n-well region through the insulator layer to an upper surface of the device region. A pair of pull-down transistors are disposed in the device region and over the n-well. The pair of pull-down transistors have their respective gates coupled to a pair of complementary bitlines, respectively, and coupled to the n-well through the n-well contact region.