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RESISTIVE MEMORY CROSSBAR ARRAY WITH TOP ELECTRODE INNER SPACERS
RESISTIVE MEMORY CROSSBAR ARRAY WITH TOP ELECTRODE INNER SPACERS
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机译:带有顶部电极内部间隔的电阻式记忆交叉阵列
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摘要
A method is presented for protecting resistive random access memory (RRAM) stacks within a resistive memory crossbar array. The method includes forming conductive lines within an interlayer dielectric (ILD), forming a metal nitride layer over at least one conductive line, forming a bottom electrode, forming a RRAM stack over the metal nitride layer, the RRAM stack including a first top electrode and a second top electrode, undercutting the second top electrode to define recesses, and filling the recesses with inner spacers.
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