Light-responsive LED based on GaN/CsPbBrxI3-x heterojunction, and preparation method and application thereof

摘要

A light-responsive LED (Light Emitting Diode) based on a GaN/CsPbBr_xI_3-x heterojunction, a preparation method and an application thereof are provided. The light-responsive LED consists of a GaN base layer on a sapphire substrate, an all-inorganic perovskite CsPbBr_xI_3-x film, an indium electrode and a carbon electrode, forming an In/GaN/CsPbBr_xI_3-x/C structure, wherein: in the CsPbBr_xI_3-x film, 0x3; the all-inorganic perovskite CsPbBr_xI_3-x film and the indium electrode are arranged on the GaN base layer in parallel; and the carbon electrode is arranged on the all-inorganic perovskite CsPbBr_xI_3-x film. The CsPbBr_xI_3-x film is prepared through a low-temperature anti-solvent method. The prepared LED device is able to realize integration of self-powered visible detection and visible luminescence, and able to work as a transmitting terminal or a receiving terminal in visible light wireless communication, which solves a difficult problem of backward communication in visible light wireless communication technology.