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Preparation method and application of light-responsive LED based on GaN/CsPbBrxI3-x heterojunction
Preparation method and application of light-responsive LED based on GaN/CsPbBrxI3-x heterojunction
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机译:基于GaN / CsPbBr x Sub> I 3-x Sub>异质结的光敏LED的制备方法及应用
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摘要
A light-responsive LED (Light Emitting Diode) based on a GaN/CsPbBrxI3-x heterojunction, a preparation method and an application thereof are provided. The light-responsive LED consists of a GaN base layer on a sapphire substrate, an all-inorganic perovskite CsPbBrxI3-x film, an indium electrode and a carbon electrode, forming an In/GaN/CsPbBrxI3-x/C structure, wherein: in the CsPbBrxI3-x film, 0x3; the all-inorganic perovskite CsPbBrxI3-x film and the indium electrode are arranged on the GaN base layer in parallel; and the carbon electrode is arranged on the all-inorganic perovskite CsPbBrxI3-x film. The CsPbBrxI3-x film is prepared through a low-temperature anti-solvent method. The prepared LED device is able to realize integration of self-powered visible detection and visible luminescence, and able to work as a transmitting terminal or a receiving terminal in visible light wireless communication, which solves a difficult problem of backward communication in visible light wireless communication technology.
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机译:提供了一种基于GaN / CsPbBr x Sub> I 3-x Sub>异质结的光敏LED(发光二极管),其制备方法和应用。光响应LED由蓝宝石衬底上的GaN基层,全无机钙钛矿CsPbBr x Sub> I 3-x Sub>膜,铟电极和碳电极组成,形成In / GaN / CsPbBr x Sub> I 3-x Sub> / C结构,其中:在CsPbBr x Sub> I 3- x Sub>胶片,0 x Sub> I 3-x Sub>膜和铟电极平行排列在GaN基层上。碳电极排列在全无机钙钛矿CsPbBr x Sub> I 3-x Sub>膜上。通过低温反溶剂法制备了CsPbBr x Sub> I 3-x Sub>薄膜。所制备的LED装置能够实现自供电的可见光检测和可见光的集成,并且能够在可见光无线通信中作为发送端或接收端工作,解决了可见光无线通信中向后通信的难题。技术。
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