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Thin-film semiconductor substrate, light-emitting panel, and method of manufacturing the thin-film semiconductor substrate

机译:薄膜半导体基板,发光面板以及薄膜半导体基板的制造方法

摘要

A thin-film semiconductor substrate includes a top-gate first TFT, a top-gate second TFT, and a data line (source line), in which the first TFT has a first semiconductor layer, a first gate insulating film, a first gate electrode, a first source electrode, a first drain electrode, and a first protection layer, the second TFT has a second semiconductor layer, a second gate insulating film, a second gate electrode, a second source electrode, a second drain electrode, and a second protection layer, the data line is connected to the first source electrode, the first drain electrode is an extension of the second gate electrode, and the second gate electrode is thinner than the data line.
机译:薄膜半导体衬底包括顶栅第一TFT,顶栅第二TFT和数据线(源极线),其中第一TFT具有第一半导体层,第一栅绝缘膜,第一栅电极,第一源电极,第一漏电极和第一保护层,第二TFT具有第二半导体层,第二栅绝缘膜,第二栅电极,第二源电极,第二漏电极和第二半导体层。第二保护层,数据线连接至第一源电极,第一漏电极为第二栅电极的延伸,第二栅电极比数据线细。

著录项

  • 公开/公告号USRE48032E

    专利类型

  • 公开/公告日2020-06-02

    原文格式PDF

  • 申请/专利权人 PANASONIC CORPORATION;

    申请/专利号US201715718762

  • 发明设计人 ARINOBU KANEGAE;KIYOYUKI MORITA;

    申请日2017-09-28

  • 分类号H01L29/66;H01L27/12;H01L29/786;H05B33/26;H05B33/12;H01L27/32;H05B33/22;G09F9/30;

  • 国家 US

  • 入库时间 2022-08-21 11:19:19

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