LOW NOISE TRANS-IMPEDANCE AMPLIFIERS BASED ON COMPLEMENTARY CURRENT-INJECTION FIELD-EFFECT TRANSISTOR DEVICES

摘要

The present invention relates to a novel and inventive compound device structure for a low noise current amplifier or trans-impedance amplifier. The trans-impedance amplifier includes an amplifier portion, which converts current input into voltage using a complimentary pair of novel n-type and p-type current-injection field-effect transistors (NiFET and PiFET), and a bias generation portion using another complimentary pair of NiFET and PiFET. Trans-impedance of NiFET and PiFET and its gain may be configured and programmed by a ratio of width (W) over length (L) of source channel over the width (W) over length (L) of drain channel (W/L of source channel/W/L of drain channel).