Metal gate MOSFET terahertz detector based on periodically rasterized drain

摘要

The present invention discloses a metal gate MOSFET terahertz detector based on a periodically rasterized drain, comprising a metal gate MOSFET having the periodically rasterized drain and various different pattern forms thereof, a low noise preamplifier and a voltage feedback loop, wherein the drain of the metal gate MOSFET is always used for receiving a terahertz signal, the gate of the metal gate MOSFET is connected to a first bias voltage source via a first bias resistor, a first DC blocking capacitor is connected between a source of the metal gate MOSFET and a positive input terminal of the low noise preamplifier, and the positive input terminal of the low noise preamplifier is connected to a second bias voltage source via a second bias resistor; and the voltage feedback loop comprises a feedback resistor, a grounding resistor, a second DC blocking capacitor, and a third DC blocking capacitor. The present invention realizes the adjustment of the THz response wave-band range by adjusting rasterized structure parameters of the drain, thereby improving the detection sensitivity of the detector and realizing a narrow band (even point frequency) of terahertz detection.