METHOD FOR PREPARING ISOLATION AREA OF GALLIUM OXIDE DEVICE

摘要

Disclosed is a method for preparing an isolation area (3) of a gallium oxide device, the method comprising: depositing a mask layer (2) on a gallium oxide material (1); removing a preset portion region of the mask layer (2); preparing an isolation area (3) in a position, corresponding to the preset portion region, on the gallium oxide material (1) by using a high-temperature oxidation technique, with the isolation area (3) being located between active areas of the gallium oxide device; and removing the remaining mask layer (2) on the gallium oxide material (1). The isolation area (3) is prepared by using the high-temperature oxidation technique, which prevents damage to the gallium oxide device during the preparation of the isolation area (3), thereby achieving isolation between the active areas of the gallium oxide device.