METHOD FOR PREPARING GALLIUM OXIDE/COPPER-GALLIUM OXIDE HETEROJUNCTION

摘要

The present invention belongs to the technical field of the preparation of semiconductor materials, and a method for preparing a gallium oxide/copper-gallium oxide heterojunction is provided. The method involves pre-treating a gallium oxide material, pre-depositing or placing a copper source on the surface of a gallium oxide single crystal or thin film, then placing this gallium oxide with the copper source into a high-temperature tube, and then subjecting same to a heat treatment for a certain period of time under certain conditions such that copper atoms can be controllably diffused into the gallium oxide to form a corresponding copper-gallium oxide alloy, thereby forming a gallium oxide/copper-gallium oxide heterojunction having good interface properties with gallium oxide in which no copper diffusion occurs. The outstanding advantages of the present invention lie in that a high-quality copper-gallium oxide material can be prepared, and the required equipment and manufacturing process therefor are simple and highly controllable; a gallium oxide/copper-gallium oxide heterojunction with an ideal interface can be formed to obtain ideal junction properties; and by means of the copper diffusion technique proposed in the present invention, a wide variety of devices can be manufactured in an integrated manner, and thus, copper-gallium-oxide-based new devices, which cannot be prepared by means of traditional growth technologies, can be developed.