Flexible substrate compatible solution processed P-N heterojunction diodes with indium-gallium-zinc oxide and copper oxide

摘要

Printed electronics on flexible substrates requires low temperature and solution processed active inks. With n-type indium-gallium-zinc oxide (IGZO) based electronics maturing for thin film transistor (TFT), we here demonstrate its heterojunction diode with p-copper oxide, prepared by sol-gel method and processed at temperatures compatible with polyimide substrates. The phase obtained for copper oxide is CuO. When coated on n-type oxide, it is prone to develop morphological features, which are minimized by annealing treatment. Diodes of p-CuO films with IGZO are of poor quality due to its high resistivity while, conducting indium-zinc oxide (IZO) films yielded good diode with rectification ratio of 104 and operating voltage <1.5 V. A detailed measurement at the interface by X-ray photoelectron spectroscopy and optical absorption ascertained the band alignment to be of staggered type. Consistently, the current in the diode is established to be due to electrons tunnelling from n-IZO to p-CuO.