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METAL OXIDE FIELD EFFECT TRANSISTORS ON A MECHANICALLY FLEXIBLE POLYMER SUBSTRATE HAVING A DIELECTRIC THAT CAN BE PROCESSED FROM SOLUTION AT LOW TEMPERATURES
METAL OXIDE FIELD EFFECT TRANSISTORS ON A MECHANICALLY FLEXIBLE POLYMER SUBSTRATE HAVING A DIELECTRIC THAT CAN BE PROCESSED FROM SOLUTION AT LOW TEMPERATURES
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机译:具有挠性的可机械弯曲的聚合物基体上的金属氧化物场效应晶体管,可以在低温下通过溶液处理
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摘要
The present invention relates to a method for producing an electronic component, in particular a field-effect transistor (FET), comprising at least one substrate, at least one dielectric, and at least one semiconducting metal oxide, wherein the dielectric or a precursor compound thereof based on organically modified silicon oxide compounds, in particular based on silsequioxanes and/or siloxanes, can be processed out of solution, and is thermally treated at a low temperature from room temperature to 350° C., and the semiconductive metal oxide, in particular ZnO or a precursor compound thereof, can also be processed from solution at a low temperature from room temperature to 350° C.
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