METHOD FOR DETERMINING A SHEET RESISTANCE OF A SEMICONDUCTOR SUBSTRATE AFTER PLASMA-IMMERSION ION IMPLANTATION AND THERMAL ANNEALING

摘要

One aspect of the invention relates to a method for determining a sheet resistance of a semiconductor substrate after plasma-immersion ion implantation and thermal annealing, by means of a reflectance of the semiconductor substrate after its plasma-immersion ion implantation and before its thermal annealing, and of a lookup table indexing reflectance before thermal annealing and sheet resistance after thermal annealing.